1 motorola bipolar power transistor device data dpak for surface mount applications designed for line operated audio output amplifier , switchmode power supply drivers and other switching applications. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel (at4o suffix) ? electrically similar to popular tip47, and tip50 ? 250 and 400 v (min) e v ceo(sus) ? 1 a rated collector current ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? ???????????? ???????????? rating ???? ???? ???? ???? symbol ???? ???? ???? ???? mjd47 ???? ???? ???? ???? mjd50 ??? ??? ??? ??? unit ???????????? ???????????? ???????????? ???????????? collectoremitter voltage ???? ???? ???? ???? v ceo ???? ???? ???? ???? 250 ???? ???? ???? ???? 400 ??? ??? ??? ??? vdc ???????????? ???????????? ???????????? ???????????? collectorbase voltage ???? ???? ???? ???? v cb ???? ???? ???? ???? 350 ???? ???? ???? ???? 500 ??? ??? ??? ??? vdc ???????????? ???????????? ???????????? ???????????? emitterbase voltage ???? ???? ???? ???? v eb ??????? ??????? ??????? ??????? 5 ??? ??? ??? ??? vdc ???????????? ???????????? ???????????? ???????????? ???????????? collector current e continuous peak ???? ???? ???? ???? ???? i c ??????? ??????? ??????? ??????? ??????? 1 2 ??? ??? ??? ??? ??? adc ???????????? ???????????? ???????????? ???????????? base current ???? ???? ???? ???? i b ??????? ??????? ??????? ??????? 0.6 ??? ??? ??? ??? adc ???????????? ???????????? ???????????? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? ???? ???? p d ??????? ??????? ??????? ??????? 15 0.12 ??? ??? ??? ??? watts w/ c ???????????? ???????????? ???????????? ???????????? ???????????? total power dissipation* @ t a = 25 c derate above 25 c ???? ???? ???? ???? ???? p d ??????? ??????? ??????? ??????? ??????? 1.56 0.0125 ??? ??? ??? ??? ??? watts w/ c ???????????? ???????????? ???????????? ???????????? ???????????? operating and storage junction temperature range ???? ???? ???? ???? ???? t j , t stg ??????? ??????? ??????? ??????? ??????? 65 to + 150 ??? ??? ??? ??? ??? c ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? ???????????? ???????????? characteristic ???? ???? ???? ???? symbol ??????? ??????? ??????? ??????? max ??? ??? ??? ??? unit ???????????? ???????????? ???????????? ???????????? thermal resistance, junction to case ???? ???? ???? ???? r q jc ??????? ??????? ??????? ??????? 8.33 ??? ??? ??? ??? c/w ???????????? ???????????? ???????????? ???????????? thermal resistance, junction to ambient* ???? ???? ???? ???? r q ja ??????? ??????? ??????? ??????? 80 ??? ??? ??? ??? c/w ???????????? ???????????? ???????????? ???????????? lead t emperature for soldering purpose ???? ???? ???? ???? t l ??????? ??????? ??????? ??????? 260 ??? ??? ??? ??? c ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ????????????? ????????????? ????????????? ????????????? characteristic ???? ???? ???? ???? symbol ???? ???? ???? ???? min ??? ??? ??? ??? max ??? ??? ??? ??? unit ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? off characteristics ????????????? ????????????? ????????????? ????????????? ????????????? collectoremitter sustaining voltage (1) mjd47 (i c = 30 madc, i b = 0) mjd50 ???? ???? ???? ???? ???? v ceo(sus) ???? ???? ???? ???? ???? 250 400 ??? ??? ??? ??? ??? e e ??? ??? ??? ??? ??? vdc ????????????? ????????????? ????????????? ????????????? ????????????? collector cutoff current (v ce = 150 vdc, i b = 0) mjd47 (v ce = 300 vdc, i b = 0) mjd50 ???? ???? ???? ???? ???? i ceo ???? ???? ???? ???? ???? e e ??? ??? ??? ??? ??? 0.2 0.2 ??? ??? ??? ??? ??? madc * when surface mounted on minimum pad sizes recommended. (continued) (1) pulse test: pulse width 300 m s, duty cycle 2%. preferred devices are motorola recommended choices for future use and best overall value.
semiconductor technical data order this document by mjd47/d ? motorola, inc. 1995 npn silicon power transistors 1 ampere 250, 400 volts 15 watts
*motorola preferred device minimum pad sizes recommended for surface mounted applications 0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 0.165 4.191 0.190 4.826 inches mm case 369a13 case 36907 rev 1
2 motorola bipolar power transistor device data ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? electrical characteristics continued (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? symbol ???? ???? ???? ???? min ???? ???? ???? ???? max ??? ??? ??? ??? unit ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? off characteristics e continued ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collector cutoff current (v ce = 350 vdc, v be = 0) mjd47 (v ce = 500 vdc, v be = 0) mjd50 ???? ???? ???? ???? ???? ???? i ces ???? ???? ???? ???? ???? ???? e e ???? ???? ???? ???? ???? ???? 0.1 0.1 ??? ??? ??? ??? ??? ??? madc ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ???? ???? ???? ???? ???? i ebo ???? ???? ???? ???? ???? e ???? ???? ???? ???? ???? 1 ??? ??? ??? ??? ??? madc ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? on characteristics (1) ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? dc current gain (i c = 0.3 adc, v ce = 10 vdc) (i c = 1 adc, v ce = 10 vdc) ???? ???? ???? ???? ???? h fe ???? ???? ???? ???? ???? 30 10 ???? ???? ???? ???? ???? 150 e ??? ??? ??? ??? ??? e ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collectoremitter saturation voltage (i c = 1 adc, i b = 0.2 adc) ???? ???? ???? ???? ???? v ce(sat) ???? ???? ???? ???? ???? e ???? ???? ???? ???? ???? 1 ??? ??? ??? ??? ??? vdc ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? baseemitter on voltage (i c = 1 adc, v ce = 10 vdc) ???? ???? ???? ???? ???? v be(on) ???? ???? ???? ???? ???? e ???? ???? ???? ???? ???? 1.5 ??? ??? ??? ??? ??? vdc ?????????????????????????????????? ?????????????????????????????????? ?????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? current gain e bandwidth product (i c = 0.2 adc, v ce = 10 vdc, f = 2 mhz) ???? ???? ???? ???? ???? f t ???? ???? ???? ???? ???? 10 ???? ???? ???? ???? ???? e ??? ??? ??? ??? ??? mhz ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? smallsignal current gain (i c = 0.2 adc, v ce = 10 vdc, f = 1 khz) ???? ???? ???? ???? ???? h fe ???? ???? ???? ???? ???? 25 ???? ???? ???? ???? ???? e ??? ??? ??? ??? ??? e (1) pulse test: pulse width 300 m s, duty cycle 2%. 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissip ation (w atts) figure 2. switching time equivalent circuit approx +11 v r b 4 v t 1 scope v cc r c 51 r b and r c varied to obtain desired current levels. 2.5 0 2 1.5 1 0.5 t a t c t c duty cycle 2% approx 9 v t 1 7 ns 10 < t 2 < 500 m s t 3 < 15 ns v in 0 c jd << c eb v in t 2 t 3 approx +11 v v in turnon pulse t a (surface mount) v eb(off) turnoff pulse typical characteristics
3 motorola bipolar power transistor device data 0.02 i c , collector current (amps) 1 0.8 v, vol tage (vol ts) 1.4 1.2 0.4 0 0.6 0.2 v be(sat) @ i c /i b = 5 v v be(on) @ v ce = 4 v v ce(sat) @ i c /i b = 5 v 0.02 i c , collector current (amps) 2 0.06 0.2 2 40 10 100 h fe , dc current gain v ce = 10 v t j = 150 c 60 0.1 0.6 25 c 55 c 20 0.04 0.4 1 200 4 6 figure 3. dc current gain t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal r q jc(t) = r(t) r q jc r q jc = 8.33 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) figure 4. aono voltages 0.7 figure 5. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.06 0.2 2 0.1 0.6 0.04 0.4 1 0.2 single pulse d = 0.5 0.05 t j = 25 c 0.1 0.02 0.01 i c , collect or current (amp) 5 v ce , collectoremitter voltage (volts) 0.005 500 1 0.2 0.05 0.02 second breakdown limit thermal limit @ 25 c wire bond limit 20 200 10 t c 25 c 100 m s 1 ms dc 0.01 0.1 0.5 2 5 figure 6. active region safe operating area 100 50 300 curves apply below rated v ceo mjd50 mjd47 500 m s there are two limitations on the power handling ability of a transistor: average junction temperature and second break - down. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa - tion than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits a r e v ali d f o r d ut y c ycle s t o 1 0 % p rovide d t j(pk) 150 c. t j(pk) may be calculated from the data in fig - ure 5. at high case temperatures, thermal limitations will re - duce the power that can be handled to values less than the limitations imposed by second breakdown.
4 motorola bipolar power transistor device data 0.02 0.2 2 0.1 0.05 0.5 1 5 i c , collector current (amps) t j = 25 c v cc = 200 v i c /i b = 5 t, time ( s) m 2 1 0.5 0.2 0.1 0.05 figure 7. turnon time figure 8. turn-off time i c , collector current (amps) 0.01 t, time ( s) m 1 0.5 0.1 0.05 0.02 0.02 0.2 2 0.1 0.05 0.5 1 t r t d t s t f t j = 25 c v cc = 200 v i c /i b = 5 0.2
5 motorola bipolar power transistor device data package dimensions case 369a13 issue w style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1 2 3 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27 case 36907 issue k style 1: pin 1. base 2. collector 3. emitter 4. collector d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 0.51 v 0.030 0.050 0.77 1.27 z 0.138 3.51 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1 2 3 4
6 motorola bipolar power transistor device data how to reach us: usa / europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmf ax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok road, tai po, n.t., hong kong. 85226629298 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. at ypicalo parameters can and do vary in dif ferent applications. all operating parameters, including at ypicalso must be validated for each customer application by customer ' s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur . should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/af firmative action employer . mjd47/d ?
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